DatasheetsPDF.com

IPB081N06L3

Infineon
Part Number IPB081N06L3
Manufacturer Infineon
Description Power-Transistor
Published Sep 30, 2020
Detailed Description Type OptiMOS™3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for ...
Datasheet PDF File IPB081N06L3 PDF File

IPB081N06L3
IPB081N06L3

Overview
Type OptiMOS™3 Power-Transistor Features • Ideal for high frequency switching and sync.
rec.
• Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • N-channel, logic level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC61249-2-21 IPB081N06L3 G IPP084N06L3 G IPI084N06L3 G Product Summary VDS RDS(on),max (SMD) ID 60 V 8.
1 mΩ 50 A Type IPB081N06L3 G IPP084N06L3 G IPI084N06L3 G Package Marking PG-TO263-3 081N06L PG-TO220-3 084N06L PG-TO262-3 084N06L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Continuous drain current Pulsed drain current3) Avalanche energy, single pulse4) Gate source voltage ID I D,pulse E AS V GS T C=25 °C2) T C=100 °C T C=25 °C I D=50 A, R GS=25 Ω Power dissipation Operating and storage temperature P tot T C=25 °C T j, T stg 1)J-STD20 and JESD22 2) Current is limited ...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)