DatasheetsPDF.com

IPB083N10N3

Infineon
Part Number IPB083N10N3
Manufacturer Infineon
Description Power-Transistor
Published Sep 30, 2020
Detailed Description IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G OptiMOS™3 Power-Transistor Features • N-channel, normal level •...
Datasheet PDF File IPB083N10N3 PDF File

IPB083N10N3
IPB083N10N3

Overview
IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO 252) ID 100 V 8.
2 mW 80 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification • Halogen-free according to IEC61249-2-21 Type IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G Package Marking PG-TO220-3 086N10N PG-TO262-3 086N10N PG-TO263-3 083N10N PG-TO252-3 082N10N Maximum ratings, at T j=25 °C, un...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)