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IPB108N15N3

Infineon
Part Number IPB108N15N3
Manufacturer Infineon
Description Power-Transistor
Published Sep 30, 2020
Detailed Description IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent ga...
Datasheet PDF File IPB108N15N3 PDF File

IPB108N15N3
IPB108N15N3

Overview
IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO263) ID 150 V 10.
8 mW 83 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant; Halogen free • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification •Halogen-free according to IEC61249-2-21 Type IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G Package Marking PG-TO263 108N15N PG-TO220-3 111N15N PG-TO262-3 111N15N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter ...


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