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TK30E06N1
N-Channel MOSFET
Description
isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor TK30E06N1，ITK30E06N1 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤15.0mΩ. (VGS = 10 V) ·Enhancement mode: Vth =2.0 to 4.0V (VDS = 10 V, ID=0.2mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage
Regulator
s ...
INCHANGE
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