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FCP650N80Z
N-Channel MOSFET
Description
isc N-Channel MOSFET
Transistor
·FEATURES ·Static drain-source on-resistance: RDS(on) ≤650mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Be suitable for synchronous rectification for server and general purpose applications ·ABSOLUTE MAXIMUM RA...
INCHANGE
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