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IXTH130N10T

INCHANGE
Part Number IXTH130N10T
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 7, 2020
Detailed Description isc N-Channel MOSFET Transistor ·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Easy to drive ·100% ...
Datasheet PDF File IXTH130N10T PDF File

IXTH130N10T
IXTH130N10T


Overview
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation IXTH130N10T ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGSS Gate-Source Voltage ±20 ID Drain Current-Continuous 130 IDM Drain Current-Single Pulsed 300 PD Total Dissipation 360 Tj Operating Junction Temperature -55~175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 0.
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