DatasheetsPDF.com

Si2315BDS

INCHANGE
Part Number Si2315BDS
Manufacturer INCHANGE
Description P-Channel MOSFET
Published Oct 7, 2020
Detailed Description isc P-Channel MOSFET Transistor Si2315BDS ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤52mΩ@VGS= -4.5V; ID= ...
Datasheet PDF File Si2315BDS PDF File

Si2315BDS
Si2315BDS

Overview
isc P-Channel MOSFET Transistor Si2315BDS ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤52mΩ@VGS= -4.
5V; ID= -3.
8A ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Be suitable for synchronous rectification for server and general purpose applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous@TA=25℃ IDM Drain Current-Single Pulsed PD Total Dissipation @TA=25℃ Tj Max.
Operating Junction Temperature Tstg Storage Temperature ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)