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FQPF12N60C

N-Channel MOSFET

Description

isc N-Channel Mosfet Transistor ·FEATURES ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.65Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Designed for high efficiency switch mode power supply. ·ABSOLUTE ...

INCHANGE

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