N-Channel MOSFET. IPD50R520CP Datasheet

IPD50R520CP MOSFET. Datasheet pdf. Equivalent

Part IPD50R520CP
Description N-Channel MOSFET
Feature isc N-Channel MOSFET Transistor IPD50R520CP, IIPD50R520CP ·FEATURES ·Static drain-source on-resist.
Manufacture INCHANGE
Datasheet
Download IPD50R520CP Datasheet

Type CoolMOSTM Power Transistor Package • Lowest figure of m IPD50R520CP Datasheet
isc N-Channel MOSFET Transistor IPD50R520CP, IIPD50R520CP IPD50R520CP Datasheet
Recommendation Recommendation Datasheet IPD50R520CP Datasheet




IPD50R520CP
isc N-Channel MOSFET Transistor
IPD50R520CP, IIPD50R520CP
·FEATURES
·Static drain-source on-resistance:
RDS(on)520m
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Fast switching
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
500
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
7.1
IDM
Drain Current-Single Pulsed
15
PD
Total Dissipation @TC=25
66
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT
V
V
A
A
W
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-c) Channel-to-case thermal resistance
Rth(j-a) Channel-to-ambient thermal resistance
MAX
1.9
62
UNIT
/W
/W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark



IPD50R520CP
isc N-Channel MOSFET Transistor
IPD50R520CP, IIPD50R520CP
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID=0.5mA
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID=250μA
RDS(on)
Drain-Source On-Resistance
VGS=13V; ID=3.8A
IGSS
Gate-Source Leakage Current
VGS=20V
IDSS
Drain-Source Leakage Current
VDS=500V; VGS= 0V
VSD
Diode forward voltage
IF=3.8A, VGS = 0V
MIN TYP MAX UNIT
500
V
2.5
3.5
V
520 mΩ
0.1
μA
1
μA
1.2
V
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)