DatasheetsPDF.com
IPD65R250E6
N-Channel MOSFET
Description
isc N-Channel MOSFET
Transistor
IPD65R250E6,IIPD65R250E6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.25Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Very high commutation ruggedness ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS D...
INCHANGE
Download IPD65R250E6 Datasheet
Similar Datasheet
IPD65R250C6
MOSFET
- Infineon
IPD65R250C6
N-Channel MOSFET
- INCHANGE
IPD65R250E6
MOSFET
- Infineon
IPD65R250E6
N-Channel MOSFET
- INCHANGE
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (
Privacy Policy & Contact
)
