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IPD78CN10N
N-Channel MOSFET
Description
isc N-Channel MOSFET
Transistor
IPD78CN10N,IIPD78CN10N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤78mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYM...
INCHANGE
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