DatasheetsPDF.com

IPD80R2K8CE

INCHANGE
Part Number IPD80R2K8CE
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 8, 2020
Detailed Description isc N-Channel MOSFET Transistor IPD80R2K8CE,IIPD80R2K8CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤2.8Ω ·En...
Datasheet PDF File IPD80R2K8CE PDF File

IPD80R2K8CE
IPD80R2K8CE

Overview
isc N-Channel MOSFET Transistor IPD80R2K8CE,IIPD80R2K8CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤2.
8Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 1.
9 IDM Drain Current-Single Pulsed 6 PD Total Dissipation @TC=25℃ 42 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal r...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)