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IPD400N06N

INCHANGE
Part Number IPD400N06N
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 8, 2020
Detailed Description isc N-Channel MOSFET Transistor IPD400N06N,IIPD400N06N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤40mΩ ·Enha...
Datasheet PDF File IPD400N06N PDF File

IPD400N06N
IPD400N06N

Overview
isc N-Channel MOSFET Transistor IPD400N06N,IIPD400N06N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤40mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 27 IDM Drain Current-Single Pulsed 108 PD Total Dissipation @TC=25℃ 68 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j...


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