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IPP023N04N
N-Channel MOSFET
Description
isc N-Channel MOSFET
Transistor
IPP023N04N,IIPP023N04N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤2.3mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·For ORing and Uninterruptible Power Supply ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYM...
INCHANGE
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