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IPP60R080P7
N-Channel MOSFET
Description
isc N-Channel MOSFET
Transistor
IPP60R080P7，IIPP60R080P7 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.08Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Combines the benefits of a fast switching SJ MOSFET with excellent ease of use...
INCHANGE
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