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IPP083N10N5
N-Channel MOSFET
Description
isc N-Channel MOSFET
Transistor
IPP083N10N5，IIPP083N10N5 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.3mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RAT...
INCHANGE
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