isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤120mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Suitable for hard and soft switching
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
...