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IPW65R660CFD
N-Channel MOSFET
Description
isc N-Channel MOSFET
Transistor
·FEATURES ·Static drain-source on-resistance: RDS(on)≤660mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast Switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source ...
INCHANGE
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