Power MOSFET. IRFB3407ZPbF Datasheet

IRFB3407ZPbF MOSFET. Datasheet pdf. Equivalent

Part IRFB3407ZPbF
Description Power MOSFET
Feature IRFB3407ZPbF Applications HEXFET® Power MOSFET l Battery Management l High Speed Power Switching .
Manufacture International Rectifier
Datasheet
Download IRFB3407ZPbF Datasheet

IRFB3407ZPbF Applications HEXFET® Power MOSFET l Battery IRFB3407ZPbF Datasheet
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IRFB3407ZPbF
IRFB3407ZPbF
Applications
HEXFET® Power MOSFET
l Battery Management
l High Speed Power Switching
D
VDSS
RDS(on) typ.
75V
5.0mΩ
l Hard Switched and High Frequency Circuits
G
max.
ID (Silicon Limited)
c 6.4mΩ
122A
Benefits
S
ID (Package Limited)
120A
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
D
l Fully Characterized Capacitance and
Avalanche SOA
l Enhanced body diode dV/dt and dI/dt
Capability
l Lead-Free
S
D
G
TO-220AB
IRFB3407ZPbF
G
Gate
D
Drain
S
Source
Ordering Information
Base part number
IRFB3407ZPbF
Package Type
TO-220
Standard Pack
Form
Quantity
Tube
50
Complete Part Number
IRFB3407ZPbF
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
d Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
f Peak Diode Recovery
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
e EAS (Thermally limited) Single Pulse Avalanche Energy
Ãd IAR
Avalanche Current
d EAR
Repetitive Avalanche Energy
Thermal Resistance
Symbol
RθJC
Parameter
j Junction-to-Case
RθCS
Case-to-Sink, Flat Greased Surface , TO-220
RθJA
Junction-to-Ambient, TO-220
Max.
™ 122
86
120
488
230
1.5
± 20
6.7
-55 to + 175
300
x x 10lbf in (1.1N m)
140
See Fig. 14, 15, 21a, 21b
Typ.
–––
0.50
–––
Max.
0.65
–––
62
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1 www.irf.com © 2013 International Rectifier
March 15, 2013



IRFB3407ZPbF
IRFB3407ZPbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
ΔV(BR)DSS/ΔTJ
RDS(on)
VGS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
75 ––– –––
––– 0.094 –––
––– 5.0 6.4
2.0 ––– 4.0
V VGS = 0V, ID = 250μA
d V/°C Reference to 25°C, ID = 5mA
g mΩ VGS = 10V, ID = 75A
V VDS = VGS, ID = 150μA
RG(int)
IDSS
IGSS
Internal Gate Resistance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– 0.70 –––
––– ––– 20
––– ––– 250
––– ––– 100
––– ––– -100
Ω
μA VDS = 75V, VGS = 0V
VDS = 75V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff. (ER)
Coss eff. (TR)
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
320 ––– –––
––– 79 110
––– 19 –––
––– 24 –––
––– 55 –––
––– 15 –––
––– 64 –––
––– 38 –––
––– 65 –––
––– 4750 –––
––– 420 –––
––– 190 –––
––– 440 –––
––– 410 –––
S VDS = 50V, ID = 75A
ID = 75A
g nC
VDS = 38V
VGS = 10V
ID = 75A, VDS =0V, VGS = 10V
VDD = 49V
ns
ID = 75A
g RG = 2.6Ω
VGS = 10V
VGS = 0V
VDS = 50V
pF ƒ = 1.0MHz
i VGS = 0V, VDS = 0V to 60V
h VGS = 0V, VDS = 0V to 60V
Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
Ãdi (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
™ ––– ––– 120
MOSFET symbol
D
showing the
––– ––– 488 A integral reverse
G
––– ––– 1.3
p-n junction diode.
S
g V TJ = 25°C, IS = 75A, VGS = 0V
––– 33 50 ns TJ = 25°C
VR = 64V,
––– 39 59
TJ = 125°C
––– 42 63 nC TJ = 25°C
g IF = 75A
di/dt = 100A/μs
––– 56 84
TJ = 125°C
––– 2.2 ––– A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 120A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
‚ Repetitive rating; pulse width limited by max. junction
temperature.
ƒ Limited by TJmax, starting TJ = 25°C, L = 0.050mH
RG = 25Ω, IAS = 75A, VGS =10V. Part not recommended for use
above this value.
„ ISD 75A, di/dt 1570A/μs, VDD V(BR)DSS, TJ 175°C.
… Pulse width 400μs; duty cycle 2%.
† Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
‡ Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
ˆ Rθ is measured at TJ approximately 90°C.
2 www.irf.com © 2013 International Rectifier
March 15, 2013





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