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IRFR13N20D

INCHANGE
Part Number IRFR13N20D
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 12, 2020
Detailed Description isc N-Channel MOSFET Transistor IRFR13N20D, IIRFR13N20D ·FEATURES ·Static drain-source on-resistance: RDS(on)≤235mΩ ·En...
Datasheet PDF File IRFR13N20D PDF File

IRFR13N20D
IRFR13N20D

Overview
isc N-Channel MOSFET Transistor IRFR13N20D, IIRFR13N20D ·FEATURES ·Static drain-source on-resistance: RDS(on)≤235mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High frequency DC-DC converters ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 13 IDM Drain Current-Single Pulsed 52 PD Total Dissipation @TC=25℃ 110 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case therm...


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