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IRFR120N

N-Channel MOSFET

Description

isc N-Channel MOSFET Transistor IRFR120N, IIRFR120N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤210mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 1...

INCHANGE

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