Power MOSFET. IRFU3411 Datasheet

IRFU3411 MOSFET. Datasheet pdf. Equivalent


Part IRFU3411
Description Power MOSFET
Feature l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating .
Manufacture International Rectifier
Datasheet
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IRFU3411
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
G
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs
are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide
variety of applications.
The D-Pak is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The
straight lead, I-Pak, version (IRFU series) is for through-
hole mounting applications. Power dissipation levels up
to 1.5 watts are possible in typical surface mount
applications.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
www.irf.com
PD - 94393
IRFR3411
IRFU3411
HEXFET® Power MOSFET
D
VDSS = 100V
RDS(on) = 44m
ID = 32A
S
D-Pak
IRFR3411
I-Pak
IRFU3411
Max.
32
23
110
130
0.83
± 20
16
13
7.0
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
A
mJ
V/ns
°C
Typ.
–––
–––
–––
Max.
1.2
50
110
Units
°C/W
1
02/18/02



IRFU3411
IRFR3411/IRFU3411
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
EAS
Single Pulse Avalanche Energy‚
Min. Typ. Max. Units
Conditions
100 ––– ––– V VGS = 0V, ID = 250µA
––– 0.12 ––– V/°C Reference to 25°C, ID = 1mA
––– 36 44 mVGS = 10V, ID = 16A „
2.0 ––– 4.0 V VDS = VGS, ID = 250µA
21 ––– ––– S VDS = 50V, ID = 16A„
––– ––– 25
––– ––– 250
µA VDS = 100V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 150°C
––– ––– 100 nA VGS = 20V
––– ––– -100
VGS = -20V
––– 48 71
ID = 16A
––– 9.0 14 nC VDS = 80V
––– 14 21
VGS = 10V, See Fig. 6 and 13
––– 11 –––
VDD = 50V
––– 35 ––– ns ID = 16A
––– 39 –––
RG = 5.1
––– 35 –––
VGS = 10V, See Fig. 10 „
Between lead,
D
––– 4.5 –––
6mm (0.25in.)
nH
from package
G
––– 7.5 –––
and center of die contact
S
––– 1960 –––
VGS = 0V
––– 250 –––
VDS = 25V
––– 40 ––– pF ƒ = 1.0MHz, See Fig. 5
––– 700… 185† mJ IAS = 16A, L = 1.5mH
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
‚ Starting TJ = 25°C, L =1.5mH
RG = 25, IAS = 16A. (See Figure 12)
ƒ ISD ≤ 16A, di/dt 340A/µs, VDD V(BR)DSS,
TJ 175°C.
„ Pulse width 400µs; duty cycle 2%.
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 33
A showing the
integral reverse
G
––– ––– 110
p-n junction diode.
S
––– ––– 1.2 V TJ = 25°C, IS = 16A, VGS = 0V „
––– 115 170 ns TJ = 25°C, IF = 16A
––– 505 760 nC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
… This is a typical value at device destruction and represents
operation outside rated limits.
† This is a calculated value limited to TJ = 175°C .
* When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint dering techniques refer to application note
#AN-994.
2
www.irf.com





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