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IRL520N
TO-220C N-Channel MOSFET
Description
isc N-Channel MOSFET
Transistor
IRL520N，IIRL520N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.18Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Efficient and reliable device for use in a wide variety of applications ·ABSOLUTE MAXI...
INCHANGE
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