N-Channel MOSFET. IRL540N Datasheet

IRL540N MOSFET. Datasheet pdf. Equivalent

Part IRL540N
Description N-Channel MOSFET
Feature isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.044Ω ·Enha.
Manufacture INCHANGE
Datasheet
Download IRL540N Datasheet

Previous Datasheet Index Next Data Sheet PD - 9.1495 PREL IRL540N Datasheet
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-sou IRL540N Datasheet
PD- 95234 IRL540NS/LPbF • Lead-Free www.DataSheet4U.com IRL540NLPBF Datasheet
• Lead-Free PD - 94997 IRL540NPbF HEXFET® Power MOSFET www IRL540NPBF Datasheet
PD -91535 IRL540NS/L HEXFET® Power MOSFET Advanced Process IRL540NS Datasheet
Isc N-Channel MOSFET Transistor IRL540NS ·FEATURES ·With T IRL540NS Datasheet
PD- 95234 IRL540NS/LPbF • Lead-Free www.DataSheet4U.com IRL540NSPBF Datasheet
Recommendation Recommendation Datasheet IRL540N Datasheet




IRL540N
isc N-Channel MOSFET Transistor
·FEATURES
·Static drain-source on-resistance:
RDS(on) ≤0.044
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·reliable device for use in a wide variety of applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
100
VGS
Gate-Source Voltage
±16
ID
Drain Current-Continuous
36
IDM
Drain Current-Single Pulsed
120
PD
Total Dissipation @TC=25
140
Tj
Max. Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT
V
V
A
A
W
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX
1.1
62
UNIT
/W
/W
IRL540NIIRL540N
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark



IRL540N
isc N-Channel MOSFET Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID =250μA
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID =250μA
RDS(on)
Drain-Source On-Resistance
VGS=10V; ID=18A
IGSS
Gate-Source Leakage Current
VGS=±16V
IDSS
Drain-Source Leakage Current
VDS=100V; VGS= 0V
VSD
Diode forward voltage
IS=18A, VGS = 0V
IRL540NIIRL540N
MIN TYP MAX UNIT
100
V
1.0
2.0
V
0.044 Ω
±0.1 μA
25
μA
1.3
V
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)