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IRLR2705

Part Number	IRLR2705
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 13, 2020
Detailed Description	isc N-Channel MOSFET Transistor IRLR2705, IIRLR2705 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤40mΩ ·Enhanc...
Datasheet	IRLR2705 PDF File

Overview

isc N-Channel MOSFET Transistor IRLR2705, IIRLR2705 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤40mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast Switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 55 VGS Gate-Source Voltage ±16 ID Drain Current-Continuous 28 IDM Drain Current-Single Pulsed 110 PD Total Dissipation @TC=25℃ 68 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a...

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