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IXTP26P10T

INCHANGE
Part Number IXTP26P10T
Manufacturer INCHANGE
Description P-Channel MOSFET
Published Oct 13, 2020
Detailed Description isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤90mΩ ·Enhancement mode: ·100% ava...
Datasheet PDF File IXTP26P10T PDF File

IXTP26P10T
IXTP26P10T

Overview
isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤90mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·High side switching ·Push pull amplifiers ·Current regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -100 VGS Gate-Source Voltage ±15 ID Drain Current-Continuous -26 IDM Drain Current-Single Pulsed -80 PD Total Dissipation @TC=25℃ 150 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-c...


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