N-Channel MOSFET. SPW24N60C3 Datasheet

SPW24N60C3 MOSFET. Datasheet pdf. Equivalent

Part SPW24N60C3
Description N-Channel MOSFET
Feature isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤160mΩ ·Enhanc.
Manufacture INCHANGE
Datasheet
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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-sou SPW24N60C3 Datasheet
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SPW24N60C3
isc N-Channel MOSFET Transistor
·FEATURES
·Static drain-source on-resistance:
RDS(on)160m
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·High peak current capability
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
24.3
IDM
Drain Current-Single Pulsed
72.9
PD
Total Dissipation @TC=25
240
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT
V
V
A
A
W
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-c) Channel-to-case thermal resistance
Rth(j-a) Channel-to-ambient thermal resistance
MAX
0.52
62
UNIT
/W
/W
SPW24N60C3
ISPW24N60C3
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SPW24N60C3
isc N-Channel MOSFET Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID=0.25mA
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID=1.2mA
RDS(on)
Drain-Source On-Resistance
VGS=10V; ID=15.4A
IGSS
Gate-Source Leakage Current
VGS= 20V; VDS= 0V
IDSS
Drain-Source Leakage Current
VDS=600V; VGS= 0V
VSD
Diode forward voltage
IF=IS, VGS = 0V
SPW24N60C3
ISPW24N60C3
MIN TYP MAX UNIT
600
V
2.1
3.9
V
160 mΩ
0.1
μA
1
μA
1.2
V
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark





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