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STB15NM60ND

INCHANGE

N-Channel MOSFET


Description
isc N-Channel MOSFET Transistor STB15NM60ND DESCRIPTION ·Drain Current: ID=14A@ TC=25℃ ·Drain Source Voltage: : VDSS= 600V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Sourc...



INCHANGE

STB15NM60ND

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