isc N-Channel MOSFET Transistor
STW60NM50N
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤0.043Ω ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Be suitable for the most demanding high efficiency converters.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Dr...
