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FIR4N65F

Part Number	FIR4N65F
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 15, 2020
Detailed Description	isc N-Channel Mosfet Transistor INCHANGE Semiconductor FIR4N65F ·FEATURES ·Drain Current –ID= 4A@ TC=25℃ ·Drain Source...
Datasheet	FIR4N65F PDF File

Overview

isc N-Channel Mosfet Transistor INCHANGE Semiconductor FIR4N65F ·FEATURES ·Drain Current –ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.
0Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive Requirements ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Designed for high efficiency switch mode power supply.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS ID IDM PD Tj Tstg Drain-Source Voltage 650 V Gate-Source Voltage-Continuous ±30 V Drain Current-Continuous 4 A Drain Current-Single Plused 16 A Total Dissipation @TC=25℃ 106 W Max.
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FIR4N65F N-Channel MOSFET - INCHANGE

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