isc P-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤0.15Ω ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRIPTION ·Be designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar...
