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BUZ11S2

Part Number	BUZ11S2
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 18, 2020
Detailed Description	isc N-Channel Mosfet Transistor BUZ11S2 ·FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 0.04Ω(Max) ·SOA is Po...
Datasheet	BUZ11S2 PDF File

Overview

isc N-Channel Mosfet Transistor BUZ11S2 ·FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 0.
04Ω(Max) ·SOA is Power Dissipation Limited ·High input impedance ·High speed switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power .
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 60 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=29℃ 30 A IDM Drain Curre...

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