DatasheetsPDF.com
2SC6144
NPN Transistor
Description
isc Silicon
NPN
Power
Transistor
s DESCRIPTION ·Collector-Emitter Saturation Voltage- : VCE(sat) = 0.36V(Max.)@IC= 6A ·Collector-Emitter Breakdown Voltage- : V(BR) CEO= 50V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Relay drivers,lamp drivers,motor drivers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ...
INCHANGE
Download 2SC6144 Datasheet
Similar Datasheet
2SC6100
Silicon NPN Transistor
- Toshiba Semiconductor
2SC6101
NPN Epitaxial Planar Silicon Transistors
- Sanyo Semicon Device
2SC6102
NPN Epitaxial Planar Silicon Transistors
- Sanyo Semicon Device
2SC6102
PNP / NPN Epitaxial Planar Silicon Transistors
- ON Semiconductor
2SC6105
Silicon NPN Transistor
- Toshiba
2SC6106
NPN Triple Diffused Planar Silicon Transistor
- Sanyo Semicon Device
2SC6112
NPN Triple Diffused Planar Silicon Transistor
- Sanyo Semicon Device
2SC6113
NPN Triple Diffused Planar Silicon Transistor
- Sanyo Semicon Device
2SC6114
Small signal low frequency amplifier
- Rohm
2SC6116LS
NPN Triple Diffused Planar Silicon Transistor
- Sanyo Semicon Device
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (
Privacy Policy & Contact
)