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FCPF400N60

Part Number	FCPF400N60
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 24, 2020
Detailed Description	isc N-Channel MOSFET Transistor FCPF400N60 ·FEATURES ·With TO-220F packaging ·Drain Source Voltage- : VDSS ≥ 600V ·Sta...
Datasheet	FCPF400N60 PDF File

Overview

isc N-Channel MOSFET Transistor FCPF400N60 ·FEATURES ·With TO-220F packaging ·Drain Source Voltage- : VDSS ≥ 600V ·Static drain-source on-resistance: RDS(on) ≤ 400mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous;@Tc=25℃ 10 A IDM Drain Current-Single Pulsed 30 A PD Total Dissipation 31 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS...

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