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FDP030N06

Part Number	FDP030N06
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 27, 2020
Detailed Description	isc N-Channel MOSFET Transistor FDP030N06 ·FEATURES ·With TO-220 packaging ·High speed switching ·Low gate input resis...
Datasheet	FDP030N06 PDF File

Overview

isc N-Channel MOSFET Transistor FDP030N06 ·FEATURES ·With TO-220 packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous;@Tc=25℃ 193 A IDM Drain Current-Single Pulsed 772 A PD Total Dissipation 231 W Tj Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL...

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