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FDP047N08

INCHANGE
Part Number FDP047N08
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 27, 2020
Detailed Description isc N-Channel MOSFET Transistor FDP047N08 ·FEATURES ·With TO-220 packaging ·Drain Source Voltage- : VDSS ≥ 75V ·Static...
Datasheet PDF File FDP047N08 PDF File

FDP047N08
FDP047N08

Overview
isc N-Channel MOSFET Transistor FDP047N08 ·FEATURES ·With TO-220 packaging ·Drain Source Voltage- : VDSS ≥ 75V ·Static drain-source on-resistance: RDS(on) ≤ 4.
7mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 75 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous;@Tc=25℃ 164 A IDM Drain Current-Single Pulsed 656 A PD Total Dissipation 268 W Tj Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX UNIT 0.
56 ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor FDP047N08 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 250uA VGS(th) Gate Threshold Voltage VDS=VGS; ID=250uA 75 V 2.
5 4.
5 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 80A 4.
7 mΩ IGSS IDSS VSDF Gate-Source Leakage Current Drain-Source Leakage Current Diode forward voltage VGS=±20V;VDS= 0V VDS= 75V; VGS= 0V VDS= 75V; VGS= 0V;TJ=150℃ ISD= 80A, VGS = 0 V ±100 nA 1 500 μA 1.
25 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.
Please contact us if you intend our products to be used in these special applications...


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