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FDP047N10

INCHANGE
Part Number FDP047N10
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 27, 2020
Detailed Description isc N-Channel MOSFET Transistor FDP047N10 ·FEATURES ·With TO-220 packaging ·Drain Source Voltage- : VDSS ≥ 100V ·Stati...
Datasheet PDF File FDP047N10 PDF File

FDP047N10
FDP047N10

Overview
isc N-Channel MOSFET Transistor FDP047N10 ·FEATURES ·With TO-220 packaging ·Drain Source Voltage- : VDSS ≥ 100V ·Static drain-source on-resistance: RDS(on) ≤ 4.
7mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous;@Tc=25℃ 164 A IDM Drain Current-Single Pulsed 656 A PD Total Dissipation 375 W Tj Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTIC...


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