N-Channel MOSFET
Description
isc N-Channel MOSFET Transistor
FEATURES ·Static Drain-Source On-Resistance
: RDS(on) = 190mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATION ·Designed for use in switch mode power supplies and
general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
...
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