N-Channel MOSFET
Description
INCHANGE Semiconductor
Isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS=500V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.19Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAME...
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