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IPA65R660CFD

INCHANGE
Part Number IPA65R660CFD
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 28, 2020
Detailed Description INCHANGE Semiconductor Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F Package ·Drain Source Voltage- : VDSS=65...
Datasheet PDF File IPA65R660CFD PDF File

IPA65R660CFD
IPA65R660CFD

Overview
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F Package ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.
66Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous @Tc=25℃ (VGS at 10V) Tc=100℃ 6 3.
8 A IDM Drain Current-Single Pulsed 17 A PD Total Dissipation @TC=25℃ 28 W Tj Max.
Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature ...


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