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IPI65R190CFD

INCHANGE
Part Number IPI65R190CFD
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 29, 2020
Detailed Description isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.19Ω ·Enhancement mode ·Fast Sw...
Datasheet PDF File IPI65R190CFD PDF File

IPI65R190CFD
IPI65R190CFD

Overview
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.
19Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Provide all benefits of a fast switching SJ MOSFET while offering an extremely fast and robust body diode ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 17.
5 A IDM Drain Current-Single Pulsed 57.
2 A PD Total Dissipation @TC=25℃ 151 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55...


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