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IRF3709ZS

Part Number	IRF3709ZS
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 29, 2020
Detailed Description	isc N-Channel MOSFET Transistor IRF3709ZS ·DESCRIPTION ·Static drain-source on-resistance: RDS(on) ≤6.3mΩ@VGS= 10V ·Dr...
Datasheet	IRF3709ZS PDF File

Overview

isc N-Channel MOSFET Transistor IRF3709ZS ·DESCRIPTION ·Static drain-source on-resistance: RDS(on) ≤6.
3mΩ@VGS= 10V ·Drain Source Voltage : VDSS= 30V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS .
·High Frequency Synchronous Buck Converters for Computer Processor Power.
ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 30 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous 87 A ID(puls) Pulse Drain Current 350 A Ptot Total Dissipation 79 W Tj Max.
Operating Junction Temperature 175 ℃ Tstg Storage Temperature Range -55~175 ℃ ·...

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