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IRFU9024N

Part Number	IRFU9024N
Manufacturer	INCHANGE
Description	P-Channel MOSFET
Published	Oct 31, 2020
Detailed Description	isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤175mΩ(@VGS= -10V; ID= -6.6A) ·Adv...
Datasheet	IRFU9024N PDF File

Overview

isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤175mΩ(@VGS= -10V; ID= -6.
6A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Fast switching application.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -55 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous -11 A PD Total Dissipation @TC=25℃ 28 W Tj Max.
Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(j-c) Channel-to-case thermal resi...

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