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IRL8113S

Part Number	IRL8113S
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 31, 2020
Detailed Description	isc N-Channel MOSFET Transistor IRL8113S ·DESCRIPTION ·Static drain-source on-resistance: RDS(on) ≤6mΩ@VGS= 10V ·100% ...
Datasheet	IRL8113S PDF File

Overview

isc N-Channel MOSFET Transistor IRL8113S ·DESCRIPTION ·Static drain-source on-resistance: RDS(on) ≤6mΩ@VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS .
·Provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 30 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous 105 A ID(puls) Pulse Drain Current 420 A Ptot Total Dissipation 110 W Tj Max.
Operating Junction Temperature 175 ℃ Tstg Storage Temperature Range -55~175 ℃ ·...

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