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IXTA2R4N50P

INCHANGE
Part Number IXTA2R4N50P
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Nov 4, 2020
Detailed Description isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 3.75Ω@VGS=10V ·Fully characteri...
Datasheet PDF File IXTA2R4N50P PDF File

IXTA2R4N50P
IXTA2R4N50P

Overview
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 3.
75Ω@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converter ·Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 2.
4 IDM Drain Current-Single Pulsed 4.
5 PD Total Dissipation @TC=25℃ 55 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERM...


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