Power MOSFET. IXTA42N15T Datasheet

IXTA42N15T MOSFET. Datasheet pdf. Equivalent


Part IXTA42N15T
Description Power MOSFET
Feature TrenchHVTM Power MOSFET IXTA42N15T IXTP42N15T N-Channel Enhancement Mode Avalanche Rated VDSS = I.
Manufacture IXYS
Datasheet
Download IXTA42N15T Datasheet


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IXTA42N15T
TrenchHVTM
Power MOSFET
IXTA42N15T
IXTP42N15T
N-Channel Enhancement Mode
Avalanche Rated
VDSS =
ID25 =
RDS(on)
150V
42A
45mΩ
TO-263
Symbol
VDSS
VDGR
VGSM
ID25
IDM
IA
EAS
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
1.6mm (0.062in.) from case for 10s
Plastic body for 10 seconds
Mounting torque (TO-220)
TO-263
TO-220
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS
VGS = ± 20V, VDS = 0V
IDSS
RDS(on)
VDS = VDSS
VGS = 0V
TJ = 150°C
VGS = 10V, ID = 0.5 • ID25, Notes 1, 2
Maximum Ratings
150
V
150
V
± 30
V
42
A
100
A
5
A
400
mJ
200
W
-55 ... +175
°C
175
°C
-55 ... +175
°C
300
260
1.13 / 10
°C
°C
Nm/lb.in.
2.5
g
3.0
g
Characteristic Values
Min. Typ. Max.
150
V
2.5
4.5 V
±100 nA
5 μA
150 μA
38
45 mΩ
G
S
TO-220
(TAB)
GD S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z International standard packages
z 175°C Operating Temperature
z Avalanche rated
Advantages
z Easy to mount
z Space savings
z High power density
Applications
z DC-DC converters
z Battery chargers
z Switched-mode and resonant-mode
power supplies
z DC choppers
z AC motor drives
z Uninterruptible power supplies
z High speed power switching
applications
© 2008 IXYS CORPORATION, All rights reserved
DS99799A(11/08)



IXTA42N15T
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
gfs
VDS = 10V, ID = 0.5 • ID25, Note 1
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 15V, VDS =0.5 • VDSS, ID = 0.5 • ID25
RG = 10Ω (External)
Qg(on)
Qgs
Qgd
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RthJC
RthCH
TO-220
Characteristic Values
Min. Typ. Max.
20
33
S
1880
pF
255
pF
37
pF
14
ns
16
ns
50
ns
25
ns
21
nC
6.0
nC
6.6
nC
0.50
0.75 °C/W
°C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
IS
VGS = 0V
42 A
ISM
Repetitive, Pulse width limited by TJM
126 A
VSD
IF = 21A, VGS = 0V, Note 1
1.1 V
trr
IF = 25A, VGS = 0V, -di/dt = 100A/μs, VR = 50V
100
ns
IXTA42N15T
IXTP42N15T
TO-263 (IXTA) Outline
TO-220 (IXTP) Outline
Notes: 1. Pulse test, t 300μs; duty cycle, d 2%.
2. On through-hole packages, RDS(on) Kelvin test contact
location must be 5mm or less from the package body.
Pins: 1 - Gate
3 - Source
2 - Drain
4 - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537







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