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IXTA80N12T2

INCHANGE
Part Number IXTA80N12T2
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Nov 6, 2020
Detailed Description isc N-Channel MOSFET Transistor INCHANGE Semiconductor IXTA80N12T2 ·FEATURES ·Drain-Source On-Resistance: RDS(on)<17mΩ...
Datasheet PDF File IXTA80N12T2 PDF File

IXTA80N12T2
IXTA80N12T2

Overview
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IXTA80N12T2 ·FEATURES ·Drain-Source On-Resistance: RDS(on)<17mΩ ·With TO-220 packaging ·High speed switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·PFC stages ·LCD & PDP TV ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 120 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 10.
4 6.
6 80 PD Total Dissipation 325 Tj Operating Junction Temperature -55~175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERM...


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