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TK2P90E
N-Channel MOSFET
Description
isc N-Channel MOSFET
Transistor
·FEATURES ·Low drain-source on-resistance: RDS(on) ≤2.9Ω. ·Enhancement mode: Vth = 2.5 to4.0V (VDS = 10 V, ID=0.2mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage
Regulator
s ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE...
INCHANGE
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