N-Channel MOSFET. TK56E12N1 Datasheet

TK56E12N1 MOSFET. Datasheet pdf. Equivalent


Part TK56E12N1
Description N-Channel MOSFET
Feature Isc N-Channel MOSFET Transistor TK56E12N1 ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 7.5.
Manufacture INCHANGE
Datasheet
Download TK56E12N1 Datasheet


TK56E12N1 MOSFETs Silicon N-channel MOS (U-MOS-H) TK56E12N TK56E12N1 Datasheet
Isc N-Channel MOSFET Transistor TK56E12N1 ·FEATURES ·Low d TK56E12N1 Datasheet
Recommendation Recommendation Datasheet TK56E12N1 Datasheet




TK56E12N1
Isc N-Channel MOSFET Transistor
TK56E12N1
·FEATURES
·Low drain-source on-resistance:
RDS(ON) = 7.5m(VGS = 10 V)
·Enhancement mode:
Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Switching Voltage Regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
120
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-Continuous
56
A
IDM
Drain Current-Single Pulsed
210
A
PD
Total Dissipation @TC=25
168
W
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
MAX
UNIT
0.74
/W
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TK56E12N1
Isc N-Channel MOSFET Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 10mA
VGS(th)
Gate Threshold Voltage
VDS= 10V; ID=1.0mA
RDS(on) Drain-Source On-Resistance
VGS=10V; ID=28A
IGSS
Gate-Source Leakage Current
VGS= ±20V;VDS= 0V
IDSS
Drain-Source Leakage Current VDS= 120V; VGS= 0V
VSDF
Diode forward voltage
IDR =56A, VGS = 0 V
TK56E12N1
MIN TYP MAX UNIT
120
V
2.0
4.0
V
7
mΩ
±0.1 μA
10
μA
1.2
V
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark







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