DatasheetsPDF.com
TK56E12N1
N-Channel MOSFET
Description
Isc N-Channel MOSFET
Transistor
TK56E12N1 ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 7.5mΩ (VGS = 10 V) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage
Regulator
s ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) ...
INCHANGE
Download TK56E12N1 Datasheet
Similar Datasheet
TK56E12N1
N-Channel MOSFET
- INCHANGE
TK56E12N1
Silicon N-Channel MOSFET
- Toshiba Semiconductor
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (
Privacy Policy & Contact
)
