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TK3R1E04PL
N-Channel MOSFET
Description
iscN-Channel MOSFET
Transistor
TK3R1E04PL ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 3.1mΩ (MAX) (VGS = 10 V) ·Enhancement mode: Vth = 1.4 to 2.4V (VDS = 10 V, ID=0.5mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage
Regulator
s ·ABSOLUTE MAXIMUM RATINGS(T...
INCHANGE
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